vishay siliconix sif912edz document number: 72952 s-82350-rev. d, 22-sep-08 www.vishay.com 1 bi-directional n-channel 30-v (d-s) mosfet features ? halogen-free ? trenchfet ? power mosfet: 2.5 v rated ? esd protected: 3000 v applications ? battery protection circuitry ? 1-cell li-ion battery pack - lib/lip - lithium-polymer product summary v ds (v) r ds(on) ( )i d (a) 30 0.019 at v gs = 4.5 v 10.7 0.0195 at v gs = 4.0 v 10.5 0.022 at v gs = 3.1 v 9.9 0.027 at v gs = 2.5 v 9.0 powerpak ? 2 x 5 s 1 s 1 g 1 s 2 s 2 g 2 1 2 3 4 5 6 marking code mcxyz mc: part # code xyz: lot traceability and date code ordering information: SIF912EDZ-T1-GE3 (lead (pb)-free and halogen-free) d 1 s 1 g 1 2.6 k d 2 s 2 g 2 2.6 k notes: a. surface mounted on 1" x 1" fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 10 s steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) a t a = 25 c i d 10.7 7.4 a t a = 85 c 7.7 5.3 pulsed drain current (v gs = 8 v, 10 s) i dm 80 continuous diode current (diode conduction) a i s 2.9 1.3 maximum power dissipation a t a = 25 c p d 3.5 1.6 w t a = 85 c 1.8 0.86 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a t 10 s r thja 30 36 c/w steady state 61 76 maximum junction-to-case (drain) steady state r thjc 4.5 5.6 rohs compliant
www.vishay.com 2 document number: 72952 s-82350-rev. d, 22-sep-08 vishay siliconix sif912edz notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics 25 c, unless otherwise noted specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.6 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 4.5 v 10 a v ds = 0 v, v gs = 12 v 500 zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 v ds = 30 v, v gs = 0 v, t j = 85 c 5 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 40 a drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 7.4 a 0.0155 0.019 v gs = 4.0 v, i d = 7.3 a 0.016 0.0195 v gs = 3.1 v, i d = 6.8 a 0.018 0.022 v gs = 2.5 v, i d = 3.5 a 0.022 0.027 forward transconductance a g fs v ds = 10 v, i d = 7.4 a 37 s diode forward voltage a v sd i s = 2.9 a, v gs = 0 v 0.75 1.1 v dynamic b total gate charge q g v ds = 15 v, v gs = 4.5 v, i d = 7.4 a 9.8 15 nc gate-source charge q gs 2.5 gate-drain charge q gd 2.9 tu r n - o n d e l ay t i m e t d(on) v dd = 15 v, r l = 15 i d ? 1 a, v gen = 10 v, r g = 6 0.53 0.8 s rise time t r 0.70 1.1 turn-off delay time t d(off) 8.0 12 fall time t f 3.4 5 gate-current vs. gate-source voltage 0 4 8 12 16 0246810121416 v gs - gate-to-source voltage (v) - gate current (ma) i gss gate current vs. gate-source voltage 0.0001 100 100 000 0.1 1 10 1000 v gs - gate-to-source voltage (v) - gate current ( a) i gss 0 369 52 t j = 25 c t j = 150 c 10 000 0.01 0.001 12
document number: 72952 s-82350-rev. d, 22-sep-08 www.vishay.com 3 vishay siliconix sif912edz typical characteristics 25 c, unless otherwise noted output characteristics on-resistance vs. drain current on-resistance vs. junction temperature 0 5 10 15 20 25 30 35 40 012345 v gs = 5 thru 3 v 2.5 v v ds - drain-to-source voltage (v) - drain current (a) i d 2 v 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 35 40 v gs = 4.5 v - on-resistance ( ) r ds(on) i d - drain current (a) v gs = 3 v v gs = 4 v v gs = 2.5 v 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 4.5 v i d = 7.4 a t j - junction temperature (c) r ds(on) - on-resistance (normalized) transfer characteristics gate charge source-drain diode forward voltage 0 5 10 15 20 25 30 35 40 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 c t c = 125 c - 55 c v gs - gate-to-source voltage (v) - drain current (a) i d 0 1 2 3 4 5 024681012 v ds = 15 v i d = 7.4 a - gate-to-source voltage (v) q g - total gate charge (nc) v gs 1.2 1.5 1 10 50 0 0.3 0.6 0.9 t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s t j = 25 c
www.vishay.com 4 document number: 72952 s-82350-rev. d, 22-sep-08 vishay siliconix sif912edz typical characteristics 25 c, unless otherwise noted on-resistance vs. gate-to-source voltage single pulse power, junction-to-ambient 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012345 i d = 7.4 a - on-resistance ( ) r ds(on) v gs - gate-to-source voltage (v) i d = 5 a 0 10 50 power (w) time (s) 30 40 0.1 1000 1 0.01 0.001 20 10 100 threshold voltage safe operating area - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a variance (v) v gs(th) t j - temperature (c) - drain current (a) i d v ds - drain-to-source voltage (v) * v gs > minimum v gs at which r ds(on) is specified 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single pulse 1s,10s bvdss limited 1ms 100 s 10 ms dc 100 ms r ds(on) * limited by i dm limited (v gs = 8 v, < 10 s) dm limited i (v gs = 4.5 v, < 300 s) normalized thermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 61 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
document number: 72952 s-82350-rev. d, 22-sep-08 www.vishay.com 5 vishay siliconix sif912edz typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72952 . normalized thermal transient impedance, junction-to-foot 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 square wave pulse duration (s) normalized eff ective transient thermal impedance 0.02
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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